BSP317PL6327HTSA1
MOSFET P-CH 250V 430MA SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies SIPMOS® BSP317PL6327HTSA1 is a P-Channel Power MOSFET designed for power management applications. This device features a drain-source voltage (Vdss) of 250 V and a continuous drain current (Id) of 430 mA at 25°C, with a maximum power dissipation of 1.8 W. The Rds On is specified at 4 Ohm maximum at 430 mA, 10 V, and the gate charge (Qg) is 15.1 nC max at 10 V. Input capacitance (Ciss) is 262 pF max at 25 V. The device operates across a temperature range of -55°C to 150°C. It is housed in a PG-SOT223-4-21 package and is supplied on tape and reel. This MOSFET is suitable for use in various industrial sectors.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 430mA (Ta) |
| Rds On (Max) @ Id, Vgs | 4Ohm @ 430mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 370µA |
| Supplier Device Package | PG-SOT223-4-21 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 15.1 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 262 pF @ 25 V |
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