BSP317PE6327
MOSFET P-CH 250V 430MA SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SIPMOS® P-Channel Power MOSFET, part number BSP317PE6327, offers a 250V drain-to-source breakdown voltage and a continuous drain current of 430mA at 25°C ambient. This device features a low on-resistance of 4 Ohms maximum at 430mA drain current and 10V gate-source voltage, with a gate charge of 15.1 nC maximum at 10V. The input capacitance (Ciss) is specified at 262 pF maximum at 25V. Designed for surface mounting, it is supplied in the PG-SOT223-4 package. The device supports gate drive voltages from 4.5V to 10V and has a maximum gate-source voltage of ±20V. Operating temperature range is from -55°C to 150°C. Power dissipation is rated at 1.8W ambient. This component is suitable for applications in industrial and automotive sectors.
Additional Information
Series: SIPMOS®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 430mA (Ta) |
| Rds On (Max) @ Id, Vgs | 4Ohm @ 430mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 370µA |
| Supplier Device Package | PG-SOT223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 15.1 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 262 pF @ 25 V |
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