BSP316PL6327HTSA1
MOSFET P-CH 100V 680MA SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies SIPMOS® P-Channel Power MOSFET, part number BSP316PL6327HTSA1, offers a 100V drain-source voltage (Vdss) and 680mA continuous drain current (Id) at 25°C. This device features a maximum on-resistance (Rds On) of 1.8 Ohms at 680mA and 10V gate-source voltage (Vgs). Designed for surface-mount applications, it is housed in a PG-SOT223-4-21 package. Key parameters include a gate charge (Qg) of 6.4 nC maximum and input capacitance (Ciss) of 146 pF maximum. The operating temperature range is -55°C to 150°C. This component is suitable for power management applications across various industries.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 680mA (Ta) |
| Rds On (Max) @ Id, Vgs | 1.8Ohm @ 680mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 170µA |
| Supplier Device Package | PG-SOT223-4-21 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 146 pF @ 25 V |
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