BSP316PE6327T
MOSFET P-CH 100V 680MA SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the BSP316PE6327T, a P-Channel SIPMOS® power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 680mA at 25°C, with a maximum power dissipation of 1.8W. The device exhibits a low on-resistance (Rds On) of 1.8 Ohm at 680mA and 10V, supported by a gate charge of 6.4 nC at 10V. Input capacitance (Ciss) is rated at a maximum of 146 pF at 25V. Operating across a temperature range of -55°C to 150°C, the BSP316PE6327T is housed in a PG-SOT223-4 package suitable for surface mounting. This MOSFET is utilized in various industrial sectors including automotive and general purpose power management.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 680mA (Ta) |
| Rds On (Max) @ Id, Vgs | 1.8Ohm @ 680mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 170µA |
| Supplier Device Package | PG-SOT223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 146 pF @ 25 V |