BSP316PE6327
MOSFET P-CH 100V 680MA SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies BSP316PE6327 is a P-Channel Power MOSFET from the SIPMOS® series. This component features a Drain-Source Voltage (Vdss) of 100 V and a continuous Drain Current (Id) of 680 mA at 25°C. The Rds On is specified at a maximum of 1.8 Ohms when driven at 10V Vgs with 680mA Id. Gate charge (Qg) is 6.4 nC maximum at 10V Vgs, and input capacitance (Ciss) is 146 pF maximum at 25V Vds. The device is available in a PG-SOT223-4 package, suitable for surface mount applications. Maximum power dissipation is 1.8W. This MOSFET is utilized in various industrial applications requiring efficient switching and power control.
Additional Information
Series: SIPMOS®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 680mA (Ta) |
| Rds On (Max) @ Id, Vgs | 1.8Ohm @ 680mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 170µA |
| Supplier Device Package | PG-SOT223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 146 pF @ 25 V |
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