BSP315PL6327HTSA1
MOSFET P-CH 60V 1.17A SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies SIPMOS® P-Channel enhancement mode MOSFET, part number BSP315PL6327HTSA1, is designed for applications requiring efficient power switching. This device features a Drain-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 1.17A at 25°C (Ta), with a maximum power dissipation of 1.8W (Ta). The Rds On is specified at 800mOhm maximum at 1.17A and 10V gate drive. Gate charge (Qg) is 7.8 nC maximum at 10V, and input capacitance (Ciss) is 160 pF maximum at 25V. The BSP315PL6327HTSA1 utilizes a PG-SOT223-4-21 package for surface mounting and operates across a temperature range of -55°C to 150°C (TJ). This component is suitable for use in various industrial and automotive applications.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.17A (Ta) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 1.17A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 160µA |
| Supplier Device Package | PG-SOT223-4-21 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 160 pF @ 25 V |
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