BSP315PE6327T
MOSFET P-CH 60V 1.17A SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the BSP315PE6327T, a P-Channel SIPMOS® MOSFET designed for demanding applications. This component features a Drain to Source Voltage (Vdss) of 60 V and a continuous drain current (Id) of 1.17 A at 25°C (Ta), with a maximum power dissipation of 1.8 W (Ta). The Rds On is rated at a maximum of 800mOhm at 1.17 A and 10 V gate drive. The device is housed in a PG-SOT223-4 package, suitable for surface mounting. Key electrical characteristics include a gate charge (Qg) of 7.8 nC (Max) at 10 V and input capacitance (Ciss) of 160 pF (Max) at 25 V. Operating temperature range is -55°C to 150°C (TJ) with a maximum gate-source voltage (Vgs) of ±20V. This MOSFET is commonly utilized in automotive and industrial control systems.
Additional Information
Series: SIPMOS®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.17A (Ta) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 1.17A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 160µA |
| Supplier Device Package | PG-SOT223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 160 pF @ 25 V |