BSP315P-E6327
MOSFET P-CH 60V 1.17A SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SIPMOS® P-Channel MOSFET BSP315P-E6327 offers a 60V drain-source breakdown voltage and a continuous drain current of 1.17A at 25°C ambient. This device features a maximum on-resistance of 800mOhm at 1.17A and 10V gate-source voltage. With a gate charge of 7.8 nC and input capacitance of 160pF, it is designed for efficient switching applications. The BSP315P-E6327 is housed in a PG-SOT223-4 package for surface mounting and supports a maximum power dissipation of 1.8W. Its operating temperature range is -55°C to 150°C. This component is suitable for use in automotive and industrial power management systems.
Additional Information
Series: SIPMOS®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.17A (Ta) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 1.17A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 160µA |
| Supplier Device Package | PG-SOT223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 160 pF @ 25 V |