BSP300H6327XUSA1
MOSFET N-CH 800V 190MA SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SIPMOS® N-Channel Power MOSFET, part number BSP300H6327XUSA1, offers an 800V drain-source breakdown voltage and a continuous drain current of 190mA at 25°C ambient. This device features a maximum Rds On of 20 Ohms at 190mA and 10V gate-source voltage, with a gate threshold voltage of 4V at 1mA. Designed for surface mounting within a PG-SOT223-4 package, it supports a maximum power dissipation of 1.8W (Ta). Key parameters include an input capacitance (Ciss) of 230 pF at 25V, a maximum gate-source voltage of ±20V, and an operating temperature range of -55°C to 150°C (TJ). This component is suitable for applications in high-voltage power conversion and control systems, often found in industrial and consumer electronics.
Additional Information
Series: SIPMOS®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 190mA (Ta) |
| Rds On (Max) @ Id, Vgs | 20Ohm @ 190mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | PG-SOT223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Input Capacitance (Ciss) (Max) @ Vds | 230 pF @ 25 V |
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