BSP299 E6327
MOSFET N-CH 500V 400MA SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SIPMOS® N-Channel Power MOSFET, part number BSP299-E6327, features a 500V drain-source breakdown voltage and a continuous drain current of 400mA at 25°C. This surface mount device, housed in a PG-SOT223-4-21 package, offers a maximum on-resistance of 4 Ohms at 400mA drain current and 10V gate-source voltage. With low input capacitance of 400pF at 25V, the BSP299-E6327 is suitable for applications requiring efficient switching. The operating temperature range is -55°C to 150°C. This component is commonly utilized in power supply units, lighting controls, and general-purpose power switching applications within the industrial and consumer electronics sectors.
Additional Information
Series: SIPMOS®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 400mA (Ta) |
| Rds On (Max) @ Id, Vgs | 4Ohm @ 400mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | PG-SOT223-4-21 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Input Capacitance (Ciss) (Max) @ Vds | 400 pF @ 25 V |
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