BSP298L6327HUSA1
MOSFET N-CH 400V 500MA SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' BSP298L6327HUSA1 is an N-Channel SIPMOS® MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 400V and a continuous Drain Current (Id) of 500mA at 25°C, with a maximum power dissipation of 1.8W. The device exhibits a low on-resistance (Rds On) of 3 Ohm maximum at 500mA and 10V gate drive. It is provided in a PG-SOT223-4-21 package, suitable for surface mounting. Key parameters include an input capacitance (Ciss) of 400 pF at 25V, a gate-source threshold voltage (Vgs(th)) of 4V at 1mA, and a maximum gate-source voltage (Vgs) of ±20V. The operating temperature range is -55°C to 150°C. This MOSFET finds application in power supply units, lighting, and motor control systems.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 500mA (Ta) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | PG-SOT223-4-21 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 400 V |
| Input Capacitance (Ciss) (Max) @ Vds | 400 pF @ 25 V |
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