BSP297L6327HTSA1
MOSFET N-CH 200V 660MA SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SIPMOS® N-Channel Power MOSFET, part number BSP297L6327HTSA1, is a surface-mount device designed for demanding applications. This component features a Drain-Source Voltage (Vds) of 200V and a continuous Drain Current (Id) of 660mA at 25°C ambient. The Rds(On) is specified at a maximum of 1.8 Ohms at 660mA and 10V Vgs. Key characteristics include an input capacitance (Ciss) of 357pF (max) at 25V Vds and a gate charge (Qg) of 16.1nC (max) at 10V Vgs. The device operates across a temperature range of -55°C to 150°C (TJ) and is packaged in a PG-SOT223-4-21 (TO-261-4, TO-261AA) package, supplied on tape and reel. This MOSFET is suitable for use in power management, industrial automation, and general-purpose switching applications.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 660mA (Ta) |
| Rds On (Max) @ Id, Vgs | 1.8Ohm @ 660mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 1.8V @ 400µA |
| Supplier Device Package | PG-SOT223-4-21 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 16.1 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 357 pF @ 25 V |
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