BSP297 E6327
MOSFET N-CH 200V 660MA SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies N-Channel SIPMOS® Power MOSFET, part number BSP297-E6327, is designed for high-efficiency switching applications. This device features a 200V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 660mA at 25°C ambient temperature. The low on-resistance of 1.8Ohm maximum at 660mA and 10V gate-source voltage (Vgs) minimizes conduction losses. Its PG-SOT223-4 package facilitates surface mounting with a maximum power dissipation of 1.8W. Key parameters include a gate charge (Qg) of 16.1 nC maximum at 10V Vgs and an input capacitance (Ciss) of 357 pF maximum at 25V Vds. Operating over an extended temperature range of -55°C to 150°C, this MOSFET is suitable for use in industrial automation and consumer electronics.
Additional Information
Series: SIPMOS®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 660mA (Ta) |
| Rds On (Max) @ Id, Vgs | 1.8Ohm @ 660mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 1.8V @ 400µA |
| Supplier Device Package | PG-SOT223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 16.1 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 357 pF @ 25 V |
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