BSP296NL6327HTSA1
MOSFET N-CH 100V 1.2A SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSP296NL6327HTSA1 is a high-performance N-channel Power MOSFET designed for demanding automotive applications. This AEC-Q101 qualified component features a 100V drain-source breakdown voltage (Vdss) and supports a continuous drain current (Id) of 1.2A at 25°C, with a maximum power dissipation of 1.8W. Its low on-resistance of 600mOhm is achieved at 1.2A and 10V Vgs. The device utilizes Metal Oxide technology and is housed in a PG-SOT223-4 package, suitable for surface mounting. Key electrical characteristics include a gate charge (Qg) of 6.7 nC at 10V, input capacitance (Ciss) of 152.7 pF at 25V, and a threshold voltage (Vgs(th)) of 1.8V at 100µA. Operating temperature ranges from -55°C to 150°C. This MOSFET is typically employed in automotive power management and control systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 1.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 1.8V @ 100µA |
| Supplier Device Package | PG-SOT223-4 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 152.7 pF @ 25 V |
| Qualification | AEC-Q101 |
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