BSP296L6433HTMA1
MOSFET N-CH 100V 1.1A SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies SIPMOS® N-Channel Power MOSFET, part number BSP296L6433HTMA1, offers a 100V drain-source breakdown voltage and a continuous drain current of 1.1A at 25°C. This device features a maximum on-resistance of 700mOhm at 1.1A and 10V Vgs, with gate drive voltages ranging from 4.5V to 10V. The device exhibits a gate charge (Qg) of 17.2 nC at 10V and an input capacitance (Ciss) of 364 pF at 25V. Designed for surface mounting, it is housed in a PG-SOT223-4 package. The maximum power dissipation is 1.79W at 25°C ambient temperature. Operating temperature range is -55°C to 150°C. This component is suitable for applications in industrial and automotive sectors.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 700mOhm @ 1.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.79W (Ta) |
| Vgs(th) (Max) @ Id | 1.8V @ 400µA |
| Supplier Device Package | PG-SOT223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 17.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 364 pF @ 25 V |
Request a Quote
Clients Also Buy
BSS84PH6327XTSA2
MOSFET P-CH 60V 170MA SOT23-3
BSS138NH6327XTSA2
MOSFET N-CH 60V 230MA SOT23-3
BSS83PH6327XTSA1
MOSFET P-CH 60V 330MA SOT23-3
