BSP296L6327HTSA1
MOSFET N-CH 100V 1.1A SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SIPMOS® N-Channel Power MOSFET, part number BSP296L6327HTSA1, is a surface-mount device in a PG-SOT223-4 package. This component features a 100 V drain-source voltage (Vdss) and a continuous drain current (Id) of 1.1 A at 25°C. The Rds On is specified at a maximum of 700 mOhms at 1.1 A and 10 V gate-source voltage (Vgs). With a maximum power dissipation of 1.79 W (Ta), this MOSFET is suitable for applications in automotive and industrial sectors. Key parameters include a gate charge (Qg) of 17.2 nC at 10 V, input capacitance (Ciss) of 364 pF at 25 V, and a threshold voltage (Vgs(th)) of 1.8 V at 400 µA. The operating temperature range is -55°C to 150°C.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 700mOhm @ 1.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.79W (Ta) |
| Vgs(th) (Max) @ Id | 1.8V @ 400µA |
| Supplier Device Package | PG-SOT223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 17.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 364 pF @ 25 V |
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