BSP296 E6433
MOSFET N-CH 100V 1.1A SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the BSP296-E6433, an N-Channel Power MOSFET from the SIPMOS® series. This component features a 100V drain-source voltage (Vdss) and a continuous drain current of 1.1A at 25°C. The device is housed in a PG-SOT223-4 package, suitable for surface mounting. Key electrical characteristics include a maximum on-resistance (Rds On) of 700mOhm at 1.1A and 10V Vgs, and a gate charge (Qg) of 17.2 nC at 10V Vgs. Input capacitance (Ciss) is specified at 364 pF maximum at 25V Vds. The BSP296-E6433 is designed for operation across a wide temperature range of -55°C to 150°C. This MOSFET is utilized in applications such as power management and general-purpose switching.
Additional Information
Series: SIPMOS®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 700mOhm @ 1.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.79W (Ta) |
| Vgs(th) (Max) @ Id | 1.8V @ 400µA |
| Supplier Device Package | PG-SOT223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 17.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 364 pF @ 25 V |
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