BSP295L6327HTSA1
MOSFET N-CH 60V 1.8A SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SIPMOS® BSP295L6327HTSA1 is an N-channel Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 1.8A at 25°C ambient temperature, with a maximum power dissipation of 1.8W (Ta). The device boasts a low on-resistance of 300mOhm at 1.8A and 10V Vgs. Key electrical characteristics include a gate charge (Qg) of 17 nC (max) at 10V Vgs and an input capacitance (Ciss) of 368 pF (max) at 25V Vds. The BSP295L6327HTSA1 is housed in a PG-SOT223-4-21 package, suitable for surface mounting. It operates across a wide temperature range of -55°C to 150°C (TJ) and supports gate-source voltages up to ±20V. This MOSFET is commonly utilized in power management, automotive, and industrial control systems.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 1.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 1.8V @ 400µA |
| Supplier Device Package | PG-SOT223-4-21 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 368 pF @ 25 V |
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