BSP295E6327T
MOSFET N-CH 60V 1.8A SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SIPMOS® N-Channel Power MOSFET BSP295E6327T. This device features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 1.8A at 25°C (Ta). The Rds On is specified at a maximum of 300mOhm at 1.8A and 10V gate-source voltage. Gate charge (Qg) is 17nC maximum at 10V Vgs, with input capacitance (Ciss) at 368pF maximum for 25V Vds. The BSP295E6327T is packaged in a PG-SOT223-4 (TO-261-4) surface mount configuration, supplied on tape and reel. Maximum power dissipation is 1.8W (Ta). This component is suitable for applications in automotive and industrial sectors.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 1.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 1.8V @ 400µA |
| Supplier Device Package | PG-SOT223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 368 pF @ 25 V |
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