BSP295E6327
MOSFET N-CH 60V 1.8A SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' BSP295E6327 is an N-channel SIPMOS® MOSFET designed for surface mount applications. This component features a 60V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 1.8A at 25°C. The device exhibits a maximum on-resistance (Rds On) of 300mOhm at 1.8A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 17 nC at 10V and an input capacitance (Ciss) of 368 pF at 25V. The BSP295E6327 is housed in a PG-SOT223-4 package, equivalent to TO-261-4, and supports a maximum power dissipation of 1.8W. Operating over a temperature range of -55°C to 150°C, this MOSFET is suitable for various industrial and automotive applications requiring efficient switching and power management.
Additional Information
Series: SIPMOS®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 1.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 1.8V @ 400µA |
| Supplier Device Package | PG-SOT223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 368 pF @ 25 V |
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