BSP179H6327XTSA1
MOSFET N-CH 400V 210MA SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SIPMOS® BSP179H6327XTSA1 is an N-channel depletion mode MOSFET designed for high-voltage applications. This component features a Vds of 400V and a continuous drain current (Id) of 210mA at 25°C. The Rds On is specified at a maximum of 18 Ohms when driven at 10V with a drain current of 210mA. With a gate charge (Qg) of 6.8 nC at 5V and input capacitance (Ciss) of 135 pF at 25V, this device offers controlled switching characteristics. The maximum power dissipation is 1.8W (Ta), and it operates within a temperature range of -55°C to 150°C. Packaged in a PG-SOT223-4 (TO-261-4, TO-261AA) for surface mounting and supplied on tape and reel, the BSP179H6327XTSA1 is utilized in power supply units and general-purpose switching applications.
Additional Information
Series: SIPMOS®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 210mA (Ta) |
| Rds On (Max) @ Id, Vgs | 18Ohm @ 210mA, 10V |
| FET Feature | Depletion Mode |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 94µA |
| Supplier Device Package | PG-SOT223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 0V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.8 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 135 pF @ 25 V |