BSP171PE6327T
MOSFET P-CH 60V 1.9A SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies BSP171PE6327T is a P-Channel SIPMOS® Series MOSFET designed for efficient power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 60 V and a continuous Drain current (Id) of 1.9 A at 25°C. With a maximum Power Dissipation of 1.8 W (Ta) and a low On-Resistance (Rds On) of 300 mOhm at 1.9 A and 10 V Vgs, it offers excellent conduction characteristics. The BSP171PE6327T is housed in a PG-SOT223-4 package, suitable for surface mounting. Key parameters include a Gate Charge (Qg) of 20 nC @ 10 V and Input Capacitance (Ciss) of 460 pF @ 25 V. This device is utilized across various industries including automotive, industrial automation, and consumer electronics. It operates within a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 1.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 460µA |
| Supplier Device Package | PG-SOT223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 460 pF @ 25 V |
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