BSP171PE6327
MOSFET P-CH 60V 1.9A SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies' BSP171PE6327 is a P-channel MOSFET from the SIPMOS® series. This device features a 60V drain-source breakdown voltage and a continuous drain current capability of 1.9A at 25°C ambient. The Rds(on) is specified at a maximum of 300mOhm at 1.9A drain current and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 20nC (max) at 10V Vgs and input capacitance (Ciss) of 460pF (max) at 25V Vds. It operates across a temperature range of -55°C to 150°C. The component is supplied in a PG-SOT223-4 package, also known as TO-261-4, and is delivered on tape and reel. This MOSFET is suitable for applications in consumer electronics and industrial power control.
Additional Information
Series: SIPMOS®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 1.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 460µA |
| Supplier Device Package | PG-SOT223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 460 pF @ 25 V |
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