BSP170PL6327HTSA1
MOSFET P-CH 60V 1.9A SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies BSP170PL6327HTSA1 is a P-Channel SIPMOS® MOSFET designed for surface mount applications. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 1.9A at 25°C with a maximum power dissipation of 1.8W. The Rds(On) is specified at a maximum of 300mOhm at 1.9A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 14nC at 10V and an input capacitance (Ciss) of 410pF at 25V. The device operates within a temperature range of -55°C to 150°C (TJ) and is supplied in a PG-SOT223-4-21 package, also known as TO-261-4, delivered on tape and reel. Its robust characteristics make it suitable for various applications in automotive and industrial sectors.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 1.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PG-SOT223-4-21 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 410 pF @ 25 V |