BSP170PE6327T
MOSFET P-CH 60V 1.9A SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SIPMOS® P-Channel MOSFET, part number BSP170PE6327T, offers a 60V drain-source voltage and 1.9A continuous drain current at 25°C. This surface mount device, housed in a PG-SOT223-4 package (TO-261-4, TO-261AA), features a maximum on-resistance of 300mOhm at 1.9A and 10V drive voltage. With a gate charge of 14nC and input capacitance of 410pF, it is suitable for power switching applications. The operating temperature range is -55°C to 150°C. This component is utilized in various industries including automotive and industrial automation.
Additional Information
Series: SIPMOS®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 1.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PG-SOT223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 410 pF @ 25 V |
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