BSP149L6906HTSA1
MOSFET N-CH 200V 660MA SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SIPMOS® N-Channel MOSFET BSP149L6906HTSA1. This depletion mode N-channel power MOSFET features a drain-source breakdown voltage of 200 V and a continuous drain current of 660 mA at 25°C. With a maximum on-resistance of 1.8 Ohm at 660 mA and 10 Vgs, it is suitable for applications requiring efficient switching. The device offers a gate charge of 14 nC at 5 Vgs and input capacitance of 430 pF at 25 Vds. It is housed in a PG-SOT223-4-21 (TO-261-4) surface mount package, designed for operation from -55°C to 150°C. The maximum power dissipation is 1.8 W. This component finds application in power management and general-purpose switching across various industrial sectors.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 660mA (Ta) |
| Rds On (Max) @ Id, Vgs | 1.8Ohm @ 660mA, 10V |
| FET Feature | Depletion Mode |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 400µA |
| Supplier Device Package | PG-SOT223-4-21 |
| Drive Voltage (Max Rds On, Min Rds On) | 0V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 430 pF @ 25 V |
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