BSP149 E6327
MOSFET N-CH 200V 660MA SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies BSP149-E6327 is an N-Channel SIPMOS® series MOSFET designed for surface mount applications. This component features a Drain-Source Voltage (Vdss) of 200 V and a continuous drain current (Id) capability of 660mA at 25°C, with a maximum power dissipation of 1.8W. Optimized for efficiency, its on-resistance (Rds On) is specified at 1.8 Ohm maximum at 660mA and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 14 nC maximum at 5V and input capacitance (Ciss) of 430 pF maximum at 25V. The device is housed in a PG-SOT223-4 package and operates across a temperature range of -55°C to 150°C. This MOSFET is suitable for applications in power management and general-purpose switching.
Additional Information
Series: SIPMOS®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 660mA (Ta) |
| Rds On (Max) @ Id, Vgs | 1.8Ohm @ 660mA, 10V |
| FET Feature | Depletion Mode |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 400µA |
| Supplier Device Package | PG-SOT223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 0V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 430 pF @ 25 V |
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