BSP135L6906HTSA1
MOSFET N-CH 600V 120MA SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SIPMOS® N-Channel MOSFET, part number BSP135L6906HTSA1, offers a 600V drain-source breakdown voltage and a continuous drain current of 120mA at 25°C. This depletion mode N-channel MOSFET features a low on-resistance of 45 Ohms maximum at 120mA and 10V, with a gate charge of 4.9 nC and input capacitance of 146 pF at 5V and 25V respectively. The device is housed in a PG-SOT223-4-21 package (TO-261-4, TO-261AA) for surface mounting, supporting a maximum power dissipation of 1.8W. Operating temperature range is -55°C to 150°C. This component is suitable for applications in power supplies, lighting, and industrial control systems.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120mA (Ta) |
| Rds On (Max) @ Id, Vgs | 45Ohm @ 120mA, 10V |
| FET Feature | Depletion Mode |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 94µA |
| Supplier Device Package | PG-SOT223-4-21 |
| Drive Voltage (Max Rds On, Min Rds On) | 0V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.9 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 146 pF @ 25 V |
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