BSP135L6327HTSA1
MOSFET N-CH 600V 120MA SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SIPMOS® N-Channel MOSFET, part number BSP135L6327HTSA1, is designed for high-voltage applications. This device offers a 600V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 120mA at 25°C ambient. Featuring depletion mode operation, the BSP135L6327HTSA1 exhibits a maximum on-resistance (Rds On) of 45 Ohms at 120mA and 10V Vgs. The gate charge (Qg) is specified at 4.9 nC maximum at 5V Vgs, with input capacitance (Ciss) reaching 146 pF maximum at 25V Vds. The MOSFET is housed in a PG-SOT223-4-21 package, suitable for surface mounting. Its maximum power dissipation is 1.8W (Ta), and it operates across a temperature range of -55°C to 150°C. This component is frequently utilized in power supply units and industrial motor control systems.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120mA (Ta) |
| Rds On (Max) @ Id, Vgs | 45Ohm @ 120mA, 10V |
| FET Feature | Depletion Mode |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 94µA |
| Supplier Device Package | PG-SOT223-4-21 |
| Drive Voltage (Max Rds On, Min Rds On) | 0V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.9 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 146 pF @ 25 V |
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