BSP135 E6906
MOSFET N-CH 600V 120MA SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' BSP135-E6906 is an N-channel SIPMOS® series MOSFET designed for surface mount applications. This device features a Drain-Source Voltage (Vdss) of 600 V and a continuous Drain current (Id) of 120 mA at 25°C (Ta). The Rds On is specified at a maximum of 45 Ohms at 120 mA and 10 V. Key parameters include a Gate Charge (Qg) of 4.9 nC at 5 V and an input capacitance (Ciss) of 146 pF at 25 V. The MOSFET has a maximum power dissipation of 1.8 W (Ta) and an operating temperature range of -55°C to 150°C. Supplied in a PG-SOT223-4 package, this component is suitable for applications in energy management and industrial control systems.
Additional Information
Series: SIPMOS®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120mA (Ta) |
| Rds On (Max) @ Id, Vgs | 45Ohm @ 120mA, 10V |
| FET Feature | Depletion Mode |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 94µA |
| Supplier Device Package | PG-SOT223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 0V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.9 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 146 pF @ 25 V |
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