BSP135 E6327
MOSFET N-CH 600V 120MA SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies BSP135-E6327 is an N-Channel depletion mode MOSFET from the SIPMOS® series. This component features a Drain-to-Source Voltage (Vdss) of 600 V and a continuous drain current (Id) of 120 mA at 25°C. The device offers a maximum on-resistance (Rds On) of 45 Ohms at 120 mA and 10 V gate-source voltage. With a gate charge (Qg) of 4.9 nC at 5 V and input capacitance (Ciss) of 146 pF at 25 V, it is suitable for applications requiring precise control. The BSP135-E6327 is housed in a PG-SOT223-4 package for surface mounting and has a maximum power dissipation of 1.8 W. Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET is commonly found in power supply circuits and general-purpose switching applications within the industrial and consumer electronics sectors.
Additional Information
Series: SIPMOS®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120mA (Ta) |
| Rds On (Max) @ Id, Vgs | 45Ohm @ 120mA, 10V |
| FET Feature | Depletion Mode |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 94µA |
| Supplier Device Package | PG-SOT223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 0V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.9 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 146 pF @ 25 V |