BSP129L6906HTSA1
MOSFET N-CH 240V 350MA SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SIPMOS® N-Channel MOSFET, part number BSP129L6906HTSA1. This depletion mode device features a drain-source voltage (Vdss) of 240V and a continuous drain current (Id) of 350mA at 25°C. The Rds On is a maximum of 6 Ohms at 350mA and 10V Vgs. Key parameters include a gate charge (Qg) of 5.7 nC (max) and input capacitance (Ciss) of 108 pF (max). The device is housed in a PG-SOT223-4-21 package (TO-261-4, TO-261AA) and supports surface mounting. Maximum power dissipation is 1.8W (Ta). Operating temperature range is -55°C to 150°C. This component is utilized in applications such as power switching and control in industrial and consumer electronics. The product is supplied on tape and reel.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 350mA (Ta) |
| Rds On (Max) @ Id, Vgs | 6Ohm @ 350mA, 10V |
| FET Feature | Depletion Mode |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 108µA |
| Supplier Device Package | PG-SOT223-4-21 |
| Drive Voltage (Max Rds On, Min Rds On) | 0V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 240 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.7 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 108 pF @ 25 V |
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