BSP129L6327HTSA1
MOSFET N-CH 240V 350MA SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SIPMOS® N-Channel MOSFET, part number BSP129L6327HTSA1, offers a 240V drain-source breakdown voltage and a continuous drain current of 350mA at 25°C. This depletion-mode MOSFET features a maximum Rds(on) of 6 Ohm at 350mA and 10V Vgs, with a gate charge of 5.7 nC at 5V. The input capacitance (Ciss) is a maximum of 108 pF at 25V. Designed for surface mounting, it is supplied in a PG-SOT223-4-21 (TO-261-4) package, delivered on tape and reel. The device has a maximum power dissipation of 1.8W and an operating temperature range of -55°C to 150°C. This component is utilized in applications such as power management and general-purpose switching.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 350mA (Ta) |
| Rds On (Max) @ Id, Vgs | 6Ohm @ 350mA, 10V |
| FET Feature | Depletion Mode |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 108µA |
| Supplier Device Package | PG-SOT223-4-21 |
| Drive Voltage (Max Rds On, Min Rds On) | 0V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 240 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.7 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 108 pF @ 25 V |