BSP129H6906XTSA1
MOSFET N-CH 240V 350MA SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SIPMOS™ N-Channel MOSFET, part number BSP129H6906XTSA1, is a depletion mode device designed for robust performance. This surface mount component, housed in a PG-SOT223-4 package (TO-261-4, TO-261AA), offers a drain-to-source voltage (Vdss) of 240 V and a continuous drain current (Id) of 350 mA at 25°C with a maximum power dissipation of 1.8W (Ta). Key parameters include a maximum Rds On of 6 Ohms at 350 mA and 10 V, a gate charge (Qg) of 5.7 nC at 5 V, and input capacitance (Ciss) of 108 pF at 25 V. The device operates within a temperature range of -55°C to 150°C. This component finds application in industries such as industrial automation and consumer electronics. It supports drive voltages from 0 V to 10 V and has a Vgs(th) maximum of 1 V at 108µA, with Vgs(max) of ±20V.
Additional Information
Series: SIPMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 350mA (Ta) |
| Rds On (Max) @ Id, Vgs | 6Ohm @ 350mA, 10V |
| FET Feature | Depletion Mode |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 108µA |
| Supplier Device Package | PG-SOT223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 0V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 240 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.7 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 108 pF @ 25 V |
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