BSP129E6327T
MOSFET N-CH 240V 350MA SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies SIPMOS® BSP129E6327T is a depletion mode N-channel MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 240V and a continuous Drain Current (Id) of 350mA at 25°C. The Rds On is specified at a maximum of 6 Ohms at 350mA and 10V gate drive. With a maximum power dissipation of 1.8W (Ta), it is supplied in a PG-SOT223-4 package, suitable for surface mounting. Key parameters include a gate charge (Qg) of 5.7 nC at 5V and input capacitance (Ciss) of 108 pF at 25V. The operating temperature range is -55°C to 150°C. This MOSFET is utilized in various industrial applications requiring robust switching performance.
Additional Information
Series: SIPMOS®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 350mA (Ta) |
| Rds On (Max) @ Id, Vgs | 6Ohm @ 350mA, 10V |
| FET Feature | Depletion Mode |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 108µA |
| Supplier Device Package | PG-SOT223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 0V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 240 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.7 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 108 pF @ 25 V |
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