BSP125L6433HTMA1
MOSFET N-CH 600V 120MA SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SIPMOS® N-Channel Power MOSFET, part number BSP125L6433HTMA1, features a 600V drain-source voltage (Vdss) and a continuous drain current of 120mA (Ta) at 25°C. This device offers a maximum on-resistance (Rds On) of 45 Ohms at 120mA and 10V Vgs, with a gate charge (Qg) of 6.6 nC (max) at 10V. The input capacitance (Ciss) is rated at 150 pF (max) at 25V.
Designed for surface mounting in the PG-SOT223-4-21 package, this MOSFET operates across a temperature range of -55°C to 150°C. Its 1.8W (Ta) maximum power dissipation and 600V breakdown voltage make it suitable for applications in power supply units, lighting, and industrial control systems. The device supports drive voltages from 4.5V to 10V and has a gate-source voltage tolerance of ±20V.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120mA (Ta) |
| Rds On (Max) @ Id, Vgs | 45Ohm @ 120mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 2.3V @ 94µA |
| Supplier Device Package | PG-SOT223-4-21 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 150 pF @ 25 V |
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