BSP125L6327HTSA1
MOSFET N-CH 600V 120MA SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SIPMOS® N-Channel MOSFET, part number BSP125L6327HTSA1, is a 600V device designed for surface mount applications. This component features a continuous drain current of 120mA at 25°C and a maximum power dissipation of 1.8W. The Rds On is specified at 45 Ohms maximum for a Vgs of 10V and Id of 120mA. Key parameters include a gate charge of 6.6 nC and an input capacitance of 150 pF at 25V. The device operates over an extended temperature range from -55°C to 150°C and is supplied in a PG-SOT223-4-21 package, commonly known as TO-261-4. This MOSFET is suitable for use in Power Supplies, Industrial, and Lighting applications.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120mA (Ta) |
| Rds On (Max) @ Id, Vgs | 45Ohm @ 120mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 2.3V @ 94µA |
| Supplier Device Package | PG-SOT223-4-21 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 150 pF @ 25 V |