BSP125 E6327
MOSFET N-CH 600V 120MA SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SIPMOS® N-Channel Power MOSFET, part number BSP125-E6327, is designed for demanding applications. This device features a 600V drain-source breakdown voltage (Vds) and a continuous drain current (Id) capability of 120mA at 25°C ambient temperature. The BSP125-E6327 offers a maximum on-resistance (Rds On) of 45 Ohms when driven at 10V Vgs and drawing 120mA. Key parameters include a gate charge (Qg) of 6.6 nC at 10V and input capacitance (Ciss) of 150 pF at 25V.
The component is housed in a PG-SOT223-4 package, suitable for surface mounting. With a maximum power dissipation of 1.8W (Ta) and an operating temperature range of -55°C to 150°C, it is well-suited for power management and control circuits across various industrial sectors. The device supports gate drive voltages from 4.5V to 10V and has a maximum gate-source voltage (Vgs) of ±20V. Its threshold voltage (Vgs(th)) is specified at a maximum of 2.3V for 94µA. This MOSFET is supplied in Tape & Reel packaging.
Additional Information
Series: SIPMOS®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120mA (Ta) |
| Rds On (Max) @ Id, Vgs | 45Ohm @ 120mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 2.3V @ 94µA |
| Supplier Device Package | PG-SOT223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 150 pF @ 25 V |
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