BSP123L6327HTSA1
MOSFET N-CH 100V 370MA SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies BSP123L6327HTSA1 is an N-Channel SIPMOS® MOSFET designed for surface mount applications. This component features a Drain-Source Voltage (Vdss) of 100 V and a continuous Drain Current (Id) of 370mA at 25°C. The Rds On is specified at a maximum of 6 Ohms for an Id of 370mA and Vgs of 10V. Gate Charge (Qg) is a maximum of 2.4 nC at 10V, with Input Capacitance (Ciss) at a maximum of 70 pF at 25V. The maximum power dissipation is 1.79W at 25°C. This MOSFET supports a Gate-Source Voltage (Vgs) range of ±20V, with a threshold voltage (Vgs(th)) of 1.8V at 50µA. It operates from 2.8V to 10V drive voltages. The component is housed in a PG-SOT223-4 package and is supplied on tape and reel. This device is suitable for use in industrial automation and power management applications.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 370mA (Ta) |
| Rds On (Max) @ Id, Vgs | 6Ohm @ 370mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.79W (Ta) |
| Vgs(th) (Max) @ Id | 1.8V @ 50µA |
| Supplier Device Package | PG-SOT223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.8V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 70 pF @ 25 V |
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