BSP123E6327T
MOSFET N-CH 100V 370MA SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies BSP123E6327T is an N-Channel SIPMOS® MOSFET designed for surface mount applications. This component features a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 370mA at 25°C (Ta). With a maximum power dissipation of 1.79W (Ta), it is suitable for various power management tasks. The Rds On is specified at a maximum of 6 Ohm at 370mA and 10V gate-source voltage. Key electrical characteristics include a gate charge (Qg) of 2.4 nC (max) at 10 V and input capacitance (Ciss) of 70 pF (max) at 25 V. The device operates within a temperature range of -55°C to 150°C (TJ) and is housed in a PG-SOT223-4 package, also known as TO-261-4. This MOSFET finds application in industrial and automotive sectors.
Additional Information
Series: SIPMOS®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 370mA (Ta) |
| Rds On (Max) @ Id, Vgs | 6Ohm @ 370mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.79W (Ta) |
| Vgs(th) (Max) @ Id | 1.8V @ 50µA |
| Supplier Device Package | PG-SOT223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.8V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 70 pF @ 25 V |
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