BSO613SPVGHUMA1
MOSFET P-CH 60V 3.44A 8DSOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies BSO613SPVGHUMA1 is a P-Channel Power MOSFET from the SIPMOS® series, designed for efficient power switching applications. This device features a Drain-to-Source Voltage (Vdss) of 60 V and a continuous Drain Current (Id) capability of 3.44 A at 25°C. The Rds(on) is specified at a maximum of 130 mOhm when driven at 10 V with a drain current of 3.44 A. Key parameters include a Gate Charge (Qg) of 30 nC maximum at 10 V and an Input Capacitance (Ciss) of 875 pF maximum at 25 V.
The BSO613SPVGHUMA1 is housed in a PG-DSO-8 package, enabling surface mount assembly. Its Power Dissipation (Pd) is rated at 2.5 W at 25°C. This MOSFET is suitable for operation across a wide temperature range of -55°C to 150°C (TJ). Applications for this component can be found in automotive, industrial, and consumer electronics sectors where robust power management is required. The maximum Gate-to-Source Voltage (Vgs) is ±20 V.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.44A (Ta) |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 3.44A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | PG-DSO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 875 pF @ 25 V |
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