BSO4822
MOSFET N-CH 30V 12.7A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies BSO4822 is an N-Channel OptiMOS™ MOSFET designed for demanding applications. This component features a 30V drain-source breakdown voltage and can handle a continuous drain current of 12.7A at 25°C, with a maximum power dissipation of 2.5W (Ta). The low on-resistance of 10mOhm at 12.7A and 10V gate drive voltage, coupled with a gate charge (Qg) of 26.2 nC at 5V, ensures efficient switching performance.
With a maximum gate-source voltage of ±20V and a threshold voltage (Vgs(th)) of 2V at 55µA, this MOSFET offers precise control. It utilizes Metal Oxide technology and is housed in a PG-DSO-8 package, suitable for surface mounting. The input capacitance (Ciss) is rated at 1640pF maximum at 25V. Operating across a wide temperature range of -55°C to 150°C (TJ), the BSO4822 is commonly found in automotive, industrial control, and power management systems. It is supplied in Tape & Reel packaging.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 12.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 55µA |
| Supplier Device Package | PG-DSO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 26.2 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1640 pF @ 25 V |
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