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BSO4420T

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BSO4420T

MOSFET N-CH 30V 13A 8SO

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

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Infineon Technologies OptiMOS™ BSO4420T is an N-channel power MOSFET with a drain-source voltage (Vdss) of 30V. This device features a low on-resistance (Rds On) of 7.8mOhm at 13A and 10V Vgs, and a continuous drain current (Id) of 13A at 25°C. The gate charge (Qg) is specified at a maximum of 33.7 nC at 5V Vgs, with input capacitance (Ciss) at 2213 pF at 25V Vds. Designed for surface mounting, it is housed in an 8-SOIC (PG-DSO-8) package, supplied on tape and reel. Its operating temperature range is -55°C to 150°C (TJ), with a maximum power dissipation of 2.5W. This component is utilized in automotive and industrial applications.

Additional Information

Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C13A (Ta)
Rds On (Max) @ Id, Vgs7.8mOhm @ 13A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta)
Vgs(th) (Max) @ Id2V @ 80µA
Supplier Device PackagePG-DSO-8
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs33.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds2213 pF @ 25 V

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