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BSO4420

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BSO4420

MOSFET N-CH 30V 13A 8SO

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies OptiMOS™ BSO4420 is an N-Channel power MOSFET with a drain-source voltage of 30V. This component features a low on-resistance of 7.8mOhm at 13A and 10V Vgs, enabled by its advanced Metal Oxide technology. The device offers a continuous drain current of 13A (Ta) and a maximum power dissipation of 2.5W (Ta). Key parameters include a gate charge (Qg) of 33.7 nC at 5V and input capacitance (Ciss) of 2213 pF at 25V. Designed for surface mounting, it is housed in an 8-SOIC package (PG-DSO-8) and supplied on tape and reel. The operating temperature range is -55°C to 150°C. This MOSFET is suitable for applications in automotive, industrial, and consumer electronics requiring efficient power switching.

Additional Information

Series: Optimos™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C13A (Ta)
Rds On (Max) @ Id, Vgs7.8mOhm @ 13A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta)
Vgs(th) (Max) @ Id2V @ 80µA
Supplier Device PackagePG-DSO-8
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs33.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds2213 pF @ 25 V

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