BSO4410T
MOSFET N-CH 30V 11.1A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies BSO4410T is an N-Channel Power MOSFET from the OptiMOS™ series. This component features a 30 V drain-source voltage and a continuous drain current of 11.1 A at 25°C, with a maximum power dissipation of 2.5 W (Ta). The device exhibits a low on-resistance of 13 mOhm at 11.1 A and 10 V, and is designed for efficient operation with gate drive voltages ranging from 4.5 V to 10 V. Key parameters include a maximum gate charge (Qg) of 21 nC at 5 V and an input capacitance (Ciss) of 1280 pF at 25 V. The BSO4410T is available in an 8-SOIC package and is supplied on tape and reel. This MOSFET is suitable for applications in automotive and industrial power management systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 11.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 42µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1280 pF @ 25 V |
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