BSO4410
MOSFET N-CH 30V 11.1A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSO4410 is an N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 11.1A at 25°C with a maximum power dissipation of 2.5W. The BSO4410 boasts a low on-resistance (Rds On) of 13mOhm at 11.1A and 10V gate-source voltage (Vgs). It operates with a gate drive voltage range of 4.5V to 10V and has a typical gate charge (Qg) of 21 nC at 5V Vgs. Input capacitance (Ciss) is a maximum of 1280 pF at 25V Vds. Packaged in an 8-SOIC (0.154" width) surface mount configuration, this component is suitable for industrial automation, automotive power management, and consumer electronics. The operating temperature range is -55°C to 150°C.
Additional Information
Series: Optimos™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 11.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 42µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1280 pF @ 25 V |
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