BSO303SPNTMA1
MOSFET P-CH 30V 8.9A 8DSOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies presents the BSO303SPNTMA1, a P-Channel Power MOSFET from the OptiMOS™ series. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 8.9A at 25°C. Designed for surface mounting, it is housed in the PG-DSO-8 package, also known as 8-SOIC. The device exhibits a maximum on-resistance (Rds On) of 21mOhm when driven at 10V with a drain current of 8.9A. Key parameters include a gate charge (Qg) of 69 nC (max) at 10V and input capacitance (Ciss) of 1754 pF (max) at 25V. The maximum power dissipation is rated at 2.35W (Ta). Operating temperature range is -55°C to 150°C. This MOSFET is suitable for applications in automotive and industrial power management.
Additional Information
Series: Optimos™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 8.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.35W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 100µA |
| Supplier Device Package | PG-DSO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 69 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1754 pF @ 25 V |
Request a Quote
Clients Also Buy
BSS308PEH6327XTSA1
MOSFET P-CH 30V 2A SOT23-3
BSZ086P03NS3EGATMA1
MOSFET P-CH 30V 13.5A/40A TSDSON
BSL606SNH6327XTSA1
MOSFET N-CH 60V 4.5A TSOP-6
