BSO303SPHXUMA1
MOSFET P-CH 30V 7.2A 8DSOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSO303SPHXUMA1 is a P-Channel Power MOSFET designed for efficient power management in demanding applications. This component features a 30V drain-source voltage rating and a continuous drain current capability of 7.2A at 25°C ambient. The low on-resistance of 21mOhm is achieved at 9.1A and 10V gate-source drive, with a maximum gate-source voltage of ±20V. The PG-DSO-8 package offers a surface mount solution with a maximum power dissipation of 1.56W. Key electrical characteristics include a gate charge of 54nC at 10V and input capacitance of 2330pF at 25V. This MOSFET is suitable for use in automotive and industrial power switching applications.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 9.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.56W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 100µA |
| Supplier Device Package | PG-DSO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2330 pF @ 25 V |
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