BSO220N03MSGXUMA1
MOSFET N-CH 30V 7A 8DSOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSO220N03MSGXUMA1 is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 7A at 25°C. With a low on-resistance (Rds On) of 22mOhm at 8.6A and 10V Vgs, it minimizes conduction losses. The device operates with gate drive voltages from 4.5V to 10V and has a maximum gate charge of 10.4 nC at 10V. Its input capacitance (Ciss) is a maximum of 800 pF at 15V. The BSO220N03MSGXUMA1 is housed in a PG-DSO-8 package, a surface-mount 8-SOIC, and supports a power dissipation of 1.56W. It is suitable for operation across a wide temperature range, from -55°C to 150°C (TJ). This MOSFET is commonly utilized in automotive and industrial power management systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Ta) |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 8.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.56W (Ta) |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Supplier Device Package | PG-DSO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 800 pF @ 15 V |
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