BSO203SPNTMA1
MOSFET P-CH 20V 9A 8DSOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSO203SPNTMA1 is a P-Channel Power MOSFET designed for efficient power switching applications. This component features a 20V drain-source voltage rating and a continuous drain current capability of 9A at 25°C ambient. The device exhibits a low on-resistance of 21mOhm at 9A and 4.5V Vgs, facilitated by its advanced trench technology. Key parameters include a gate charge of 50.4 nC at 4.5V and an input capacitance of 2265 pF at 15V. The BSO203SPNTMA1 is housed in a PG-DSO-8 surface mount package, offering a maximum power dissipation of 2.35W. Its operating temperature range is from -55°C to 150°C. This MOSFET is suitable for use in automotive, industrial, and consumer electronics power management solutions.
Additional Information
Series: Optimos™RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 9A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.35W (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 100µA |
| Supplier Device Package | PG-DSO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 50.4 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2265 pF @ 15 V |
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